Thank you for your interest in NSN part number 311A7850P27 under NSN 5962011679962 on Click Aerospace. Click Aerospace is a website owned and operated by ASAP Semiconductor, offering customers access to an unparalleled inventory of premium parts that cater to a variety of industries and applications. Microcircuit Memory is an item listed with the part number 311A7850P27, and FSC 5962 Microcircuits Electronic and it is manufactured by Bae Systems Controls Inc having CAGE Code 89954. This item, alongside the rest of our listed NSN parts, is readily available for purchase through our website now. Get started on the purchasing process today by filling out and submitting an Instant RFQ as provided through our website. Once received, a member of our staff will reach out to you in 15 minutes or less to offer a personalized quote based on your individual needs.
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Click Aerospace is a leading independent distributor of NSN part 311A7850P27, and we can help you procure NSN components such as 5962011679962 and many more. The quality of our inventory is of the utmost importance to us, and thus we choose to only source our parts from global manufacturers like Bae Systems Controls Inc. Get started with a competitive quote today when you submit an Instant RFQ and experience how we are revolutionizing the parts procurement process.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-167-9962 Item Description: Microcircuit Memory | 5962 | 011679962 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
311a7850p27 | 2 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 150 INCHES MINIMUM AND 0 210 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING950 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND PROGRAMMABLE AND WENABLE AND 3-STATE OUTPUT |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS NOMINAL POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC120 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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