Thank you for your interest in NSN part number HM1-6551B-8 under NSN 5962011068182 on Click Aerospace. Click Aerospace is a website owned and operated by ASAP Semiconductor, offering customers access to an unparalleled inventory of premium parts that cater to a variety of industries and applications. Microcircuit Memory is an item listed with the part number HM1-6551B-8, and FSC 5962 Microcircuits Electronic and it is manufactured by Edo Corp having CAGE Code 00752. This item, alongside the rest of our listed NSN parts, is readily available for purchase through our website now. Get started on the purchasing process today by filling out and submitting an Instant RFQ as provided through our website. Once received, a member of our staff will reach out to you in 15 minutes or less to offer a personalized quote based on your individual needs.
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Click Aerospace is a leading independent distributor of NSN part HM1-6551B-8, and we can help you procure NSN components such as 5962011068182 and many more. The quality of our inventory is of the utmost importance to us, and thus we choose to only source our parts from global manufacturers like Edo Corp. Get started with a competitive quote today when you submit an Instant RFQ and experience how we are revolutionizing the parts procurement process.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-106-8182 Item Description: Microcircuit Memory | 5962 | 011068182 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | A | 0 | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Hm1-6551b-8 | 3 | 1 | C | 9 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 080 INCHES NOMINAL |
MEMORY | ADAT | BODY WIDTH0 388 INCHES NOMINAL |
MEMORY | ADAU | BODY HEIGHT0 085 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING22 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND LOW POWER AND SYNCHRONOUS AND WDISABLE AND WENABLE AND 3-STATE OUTPUT |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
MEMORY | CRHL | BIT QUANTITY1024 |
MEMORY | CSWJ | WORD QUANTITY256 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC8 3 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY22 PRINTED CIRCUIT |
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