Thank you for your interest in NSN part number HM3-6514-9 under NSN 5962011382050 on Click Aerospace. Click Aerospace is a website owned and operated by ASAP Semiconductor, offering customers access to an unparalleled inventory of premium parts that cater to a variety of industries and applications. Microcircuit Memory is an item listed with the part number HM3-6514-9, and FSC 5962 Microcircuits Electronic and it is manufactured by Intersil Communications Inc having CAGE Code 1MY79. This item, alongside the rest of our listed NSN parts, is readily available for purchase through our website now. Get started on the purchasing process today by filling out and submitting an Instant RFQ as provided through our website. Once received, a member of our staff will reach out to you in 15 minutes or less to offer a personalized quote based on your individual needs.
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Click Aerospace is a leading independent distributor of NSN part HM3-6514-9, and we can help you procure NSN components such as 5962011382050 and many more. The quality of our inventory is of the utmost importance to us, and thus we choose to only source our parts from global manufacturers like Intersil Communications Inc. Get started with a competitive quote today when you submit an Instant RFQ and experience how we are revolutionizing the parts procurement process.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-138-2050 Item Description: Microcircuit Memory | 5962 | 011382050 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | A | 0 | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Hm3-6514-9 | 3 | 1 | C | 9 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 910 INCHES NOMINAL |
MEMORY | ADAT | BODY WIDTH0 255 INCHES NOMINAL |
MEMORY | ADAU | BODY HEIGHT0 135 INCHES NOMINAL |
MEMORY | AFGA | OPERATING TEMP RANGE-0 075 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | AGAV | END ITEM IDENTIFICATIONANGRC-212 13499 |
MEMORY | CBBL | FEATURES PROVIDEDLOW POWER AND 3-STATE OUTPUT AND SYNCHRONOUS AND HIGH PERFORMANCE AND WENABLE |
MEMORY | CQSJ | INCLOSURE MATERIALRESIN |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
MEMORY | CRHL | BIT QUANTITY4096 |
MEMORY | CSWJ | WORD QUANTITY1024 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 3 VOLTS MINIMUM POWER SOURCE AND 8 3 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |
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