Thank you for your interest in NSN part number NMC6514J-2-883B under NSN 5962011639169 on Click Aerospace. Click Aerospace is a website owned and operated by ASAP Semiconductor, offering customers access to an unparalleled inventory of premium parts that cater to a variety of industries and applications. Microcircuit Memory is an item listed with the part number NMC6514J-2-883B, and FSC 5962 Microcircuits Electronic and it is manufactured by Raytheon Company having CAGE Code 96214. This item, alongside the rest of our listed NSN parts, is readily available for purchase through our website now. Get started on the purchasing process today by filling out and submitting an Instant RFQ as provided through our website. Once received, a member of our staff will reach out to you in 15 minutes or less to offer a personalized quote based on your individual needs.
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Click Aerospace is a leading independent distributor of NSN part NMC6514J-2-883B, and we can help you procure NSN components such as 5962011639169 and many more. The quality of our inventory is of the utmost importance to us, and thus we choose to only source our parts from global manufacturers like Raytheon Company. Get started with a competitive quote today when you submit an Instant RFQ and experience how we are revolutionizing the parts procurement process.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-163-9169 Item Description: MICROCIRCUIT,MEMORY | 5962 | 011639169 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
NMC6514J-2/883B | 3 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.925 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.185 INCHES NOMINAL |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
AGAV | END ITEM IDENTIFICATION | 1425-01-106-3089 GUIDED MISSILE |
CBBL | FEATURES PROVIDED | BURN IN AND HERMETICALLY SEALED AND 3-STATE OUTPUT AND LOW POWER |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 8.3 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | RAM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 18876-13153469 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA |
TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
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